Progress towards Spin-Based Light Emission in Group IV Semiconductors

Electronics

Elisa Vitiello¹  Anna Giorgioni¹  Sebastiano De Cesari¹  Fabio Pezzoli¹ 

[1] LNESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via Cozzi 55, I-20125 Milano, Italy;

关键词: spintronics;    photonics;    optoelectronics;    light sources;    strain;    optical spin orientation;    group IV materials;    germanium;    silicon;    GeSn;   

DOI  :  10.3390/electronics6010019

来源: DOAJ

【 摘 要 】

Spin-optoelectronics is an emerging technology in which novel and advanced functionalities are enabled by the synergetic integration of magnetic, optical and electronic properties onto semiconductor-based devices. This article reviews the possible implementation and convergence of spintronics and photonics concepts on group IV semiconductors: the core materials of mainstream microelectronics. In particular, we describe the rapid pace of progress in the achievement of lasing action in the notable case of Ge-based heterostructures and devote special attention to the pivotal role played by optical investigations in advancing the understanding of the rich spin physics of group IV materials. Finally, we scrutinize recent developments towards the monolithic integration on Si of a new class of spin-based light emitting devices having prospects for applications in fields such as cryptography and interconnects.

【 授权许可】

Unknown