Fast Response GaAs Photodetector Based on Constructing Electron Transmission Channel

Crystals

Lei Liao¹  Zhipeng Wei²  Dan Fang²  Shuai Guo²  Xue Chen²  Dengkui Wang²  Xuan Fang²  Jilong Tang² 

[1] State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China;State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China;

关键词: fast response;    electron transmission channel;    GaAs 2D non-layer sheet;    photodetector;   

DOI  :  10.3390/cryst11101160

来源: DOAJ

【 摘 要 】

Low-dimensional GaAs photodetectors have drawn a great deal of attention because of their unique absorption properties and superior responsivity. However, their slow response speed caused by surface states presents challenges. In this paper, a mixed-dimensional GaAs photodetector is fabricated utilizing a single GaAs nanowire (NW) and a GaAs 2D non-layer sheet (2DNLS). The photodetector exhibits a fast response with a rise time of ~4.7 ms and decay time of ~6.1 ms. The high-speed performance is attributed to an electron transmission channel at the interface between the GaAs NW and GaAs 2DNLS. Furthermore, the fast electron channel is confirmed by eliminating interface states via wet passivation. This work puts forward an effective way to realize a high-speed photodetector by utilizing the surface states of low-dimensional materials.

【 授权许可】

Unknown