Bandgap-Tuned 2D Boron Nitride/Tungsten Nitride Nanocomposites for Development of High-Performance Deep Ultraviolet Selective Photodetectors

Nanomaterials

Ali Aldalbahi¹  Mostafizur Rahaman¹  AndrewF. Zhou²  Rafael Velázquez³  PeterX. Feng³ 

[1] Department of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi Arabia;Department of Physics, Indiana University of Pennsylvania, Indiana, PA 15705, USA;Department of Physics, University of Puerto Rico, San Juan, PR 00936-8377, USA;

关键词: 2D boron nitride/tungsten nitride (BN–WN) nanocomposite;    tunable bandgap;    photodetector;    fast response;   

DOI  :  10.3390/nano10081433

来源: DOAJ

【 摘 要 】

This study presents a fast and effective method to synthesize 2D boron nitride/tungsten nitride (BN–WN) nanocomposites for tunable bandgap structures and devices. A few minutes of synthesis yielded a large quantity of high-quality 2D nanocomposites, with which a simple, low-cost deep UV photo-detector (DUV-PD) was fabricated and tested. The new device was demonstrated to have very good performance. High responsivity up to 1.17 A/W, fast response-time of lower than two milliseconds and highly stable repeatability were obtained. Furthermore, the influences of operating temperature and applied bias voltage on the properties of DUV-PD as well as its band structure shift were investigated.

【 授权许可】

Unknown