Full band Monte Carlo simulation of AlInAsSb digital alloys

InfoMat

Jiyuan Zheng¹  Andrew Jones¹  Joe C. Campbell¹  Sheikh Z. Ahmed¹  Yuan Yuan¹  Avik W. Ghosh¹  Ann K. Rockwell²  Stephen D. March²  Seth R. Bank²  Yaohua Tan³ 

[1] Electrical and Computer Engineering Department University of Virginia Charlottesville Virginia USA;Microelectronics Research Center University of Texas Austin Texas USA;Synopsys Inc Sunnyvale California USA;

关键词: AlInAsSb;    avalanche photodiode;    digital alloy;    first principle study;   

DOI  :  10.1002/inf2.12112

来源: DOAJ

【 摘 要 】

Abstract Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this article, we investigate the band structure‐related mechanisms that influence impact ionization. Band‐structures calculated using an empirical tight‐binding method and Monte Carlo simulations reveal that the mini‐gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.

【 授权许可】

Unknown