A CMOS Optoelectronic Receiver IC with an On-Chip Avalanche Photodiode for Home-Monitoring LiDAR Sensors

Sensors

Ji-Eun Joo¹  Sung Min Park¹  Myung-Jae Lee² 

[1] Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea;Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul 02792, Korea;

关键词: avalanche photodiode;    CMOS;    feedforward;    limiting amplifier;    optoelectronic;    transimpedance amplifier;   

DOI  :  10.3390/s21134364

来源: DOAJ

【 摘 要 】

This paper presents an optoelectronic receiver (Rx) IC with an on-chip avalanche photodiode (APD) realized in a 0.18-μm CMOS process for the applications of home-monitoring light detection and ranging (LiDAR) sensors, where the on-chip CMOS P⁺/N-well APD was implemented to avoid the unwanted signal distortion from bondwires and electro-static discharge (ESD) protection diodes. Various circuit techniques are exploited in this work, such as the feedforward transimpedance amplifier for high gain, and a limiting amplifier with negative impedance compensation for wide bandwidth. Measured results demonstrate 93.4-dBΩ transimpedance gain, 790-MHz bandwidth, 12-pA/√Hz noise current spectral density, 6.74-μA_pp minimum detectable signal that corresponds to the maximum detection range of 10 m, and 56.5-mW power dissipation from a 1.8-V supply. This optoelectronic Rx IC provides a potential for a low-cost low-power solution in the applications of home-monitoring LiDAR sensors.

【 授权许可】

Unknown