Design of Psub-SMPD and DNW-SMPD fabricated in a standard 0.18-µm CMOS process

IEICE Electronics Express

Chen Fan¹  Rong Wang²  Zhi-Gong Wang² 

[1] OEICs, Southeast University;Institute of RF- &

关键词: spatially-modulated photo detector;    responsivity;    parasitic capacitance;    trans-impedance amplifier;    limiting amplifier;    very-short-reach;   

DOI  :  10.1587/elex.14.20170611

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

A PSUB-strip-spatially-modulated photo detector (SMPD) and a DNW-strip-SMPD were fabricated in a standard 0.18-µm CMOS process. We analyzed and compared the bandwidth, the responsivity, and the parasitic capacitance of two PDs to provide the basis of choice for 3–5 Gbps optical receiver system. The measured responsivity and work frequency of the Psub-SMPD is 2.2 A/W and 1.8 GHz, while DNW-SMPD is 1.4 A/W and 2.9 GHz at the wavelength of 850 nm. Combined with a high performance trans-impedance amplifier and a limiting amplifier designed by us, the Psub-strip-SMPD can be used to obtain high sensitivity for the application of 3-Gbps VSR system, while for achieving the application of 5-Gbps, the DNW-strip-SMPD can be employed. Compared with other PDs recently reported, Psub-strip-SMPD and DNW-strip-SMPD exhibit the higher FOM.

【 授权许可】

CC BY