Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films as an Effective Se Diffusion Barrier for CIGS Solar Cells

Nanomaterials

Hyoungseok Moon¹  Seung Il Jang²  Eun-Kyong Koh³  Se-Hun Kwon³  Shinho Kim³  Woo-Jae Lee³  Hyun-Jae Woo³ 

[1] Advanced Energy Materials and Components R&D Group, Korea Institute of Industrial Technology (KITECH), Busan 33032, Korea;Home Appliance & Air Solution Company R&D Center, LG Electronics, 170 Seongsanpaechong-Ro, Seongsan-Gu, Changwon-Si, Geyeongsangnam-Do 51533, Korea;School of Materials Science and Engineering, Pusan National University, Busan 46241, Korea;

关键词: CIGS solar cells;    plasma-enhanced atomic layer deposition;    TiN;    Se diffusion barrier;   

DOI  :  10.3390/nano11020370

来源: DOAJ

【 摘 要 】

Plasma-enhanced atomic layer deposition (PEALD) of TiN thin films were investigated as an effective Se diffusion barrier layer for Cu (In, Ga) Se₂ (CIGS) solar cells. Before the deposition of TiN thin film on CIGS solar cells, a saturated growth rate of 0.67 Å/cycle was confirmed using tetrakis(dimethylamido)titanium (TDMAT) and N₂ plasma at 200 °C. Then, a Mo (≈30 nm)/PEALD-TiN (≈5 nm)/Mo (≈600 nm) back contact stack was fabricated to investigate the effects of PEALD-TiN thin films on the Se diffusion. After the selenization process, it was revealed that ≈5 nm-thick TiN thin films can effectively block Se diffusion and that only the top Mo layer prepared on the TiN thin films reacted with Se to form a MoSe₂ layer. Without the TiN diffusion barrier layer, however, Se continuously diffused along the grain boundaries of the entire Mo back contact electrode. Finally, the adoption of a TiN diffusion barrier layer improved the photovoltaic efficiency of the CIGS solar cell by approximately 10%.

【 授权许可】

Unknown