Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application

Sensors

Wu-Shiung Feng¹  Prasenjit Chatterjee¹  Hwang-Cherng Chow¹ 

[1] Graduate Institute of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan;

关键词: MOSFET;    magnetic sensor;    Lorentz force;   

DOI  :  10.3390/s16091389

来源: DOAJ

【 摘 要 】

This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated and placed in the center of a square-shaped metal loop which generates the on-chip magnetic field. The proposed device designed is much smaller in size with respect to the metal loop, which ensures that the generated magnetic field is approximately uniform. The change of drain current and change of bulk current per micron device width has been measured. The result shows that the difference drain current is about 145 µA for the maximum applied magnetic field. Such changes occur from the applied Lorentz force to push out the carriers from the channel. Based on the drain current difference, the change in effective mobility has been detected up to 4.227%. Furthermore, a detailed investigation reveals that the device behavior is quite different in subthreshold and saturation region. A change of 50.24 µA bulk current has also been measured. Finally, the device has been verified for use as a magnetic sensor with sensitivity 4.084% (29.6 T−1), which is very effective as compared to other previously reported works for a single device.

【 授权许可】

Unknown