Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain

Coatings

Hyunsu Shin¹  Seran Park¹  Dae-Hong Ko¹  Juhee Lee²  Eunjung Ko²  SeungWook Ryu² 

[1] Department of Material Science and Engineering, Yonsei University, Seoul 03722, Korea;R&D Division, SK Hynix Inc., Icheon-si 17336, Korea;

关键词: silicon germanium;    p-type metal-oxide-semiconductor field-effect transistors;    source/drain (S/D) regions;    epitaxial growth;    thermal annealing;   

DOI  :  10.3390/coatings11060654

来源: DOAJ

【 摘 要 】

Silicon german ium (SiGe) has attracted significant attention for applications in the source/drain (S/D) regions of p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs). However, in SiGe, as the Ge concentration increases, high-density defects are generated, which limit its applications. Therefore, several techniques have been developed to minimize defects; however, these techniques require relatively thick epitaxial layers and are not suitable for gate-all-around FETs. This study examined the effect of Ge concentration on the embedded SiGe source/drain region of a logic p-MOSFET. The strain was calculated through nano-beam diffraction and predictions through a simulation were compared to understand the effects of stress relaxation on the change in strain applied to the Si channel. When the device performance was evaluated, the drain saturation current was approximately 710 µA/µm at an off current of 100 nA/µm with a drain voltage of 1 V, indicating that the current was enhanced by 58% when the Ge concentration was optimized.

【 授权许可】

Unknown