Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light-emitting diodes

The Journal of Engineering

Zetian Mi¹  David Arto Laleyan¹  Qi Wang¹  Shaofei Zhang¹ 

[1] Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, Canada, H3A 0E9

关键词: design;    epitaxial growth;    nanowire geometry;    GaN-InGaN;    carrier transport;    hole transport;    axial nanowire light-emitting diodes;   

DOI  :  10.1049/joe.2014.0349

学科分类：工程和技术（综合）

来源: IET

【 摘 要 】

The authors have investigated the impact of nanowire geometry on the carrier transport in axial indium gallium nitride and gallium nitride (InGaN/GaN) nanowire light-emitting diodes (LEDs). The results reveal that hole transport depends critically on the nanowire geometry. With identical material parameters, the carrier transport process can be varied with different nanowire geometry designs, which lead to different overall device performance. This study offers important insight into the design and epitaxial growth of high-performance nanowire LEDs.

【 授权许可】

CC BY