Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

Nanomaterials

Pere Roca i Cabarrocas¹  Ileana Florea¹  Linwei Yu²  Yuheng Zeng³  Jichun Ye³  Junyang An⁴  Zhen Zheng⁴  Wanghua Chen⁴  Ruiling Gong⁴ 

[1] Laboratory of Physics of Interfaces and Thin Films, CNRS, Ecole Polytechnique, Institut Polytechnique de Paris, 91128 Palaiseau, France;National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;School of Physical Science and Technology, Ningbo University, Ningbo 315211, China;

关键词: Kelvin probe force microscopy;    c-Si passivation;    surface potential;    AlO_x;    SiO_x;   

DOI  :  10.3390/nano11071803

来源: DOAJ

【 摘 要 】

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlO_x layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO₂/AlO_x interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlO_x, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

【 授权许可】

Unknown