Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO2/Ni Selector Structure

IEEE Journal of the Electron Devices Society

Ke-Jing Lee¹  Yeong-Her Wang¹  Cheng-Jung Lee¹  Yu-Chi Chang¹  Li-Wen Wang¹ 

[1] Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan, Taiwan;

关键词: Bipolar resistive switching;    flexible;    memory;    selector;    sol-gel;   

DOI  :  10.1109/JEDS.2018.2801278

来源: DOAJ

【 摘 要 】

The use of a threshold-switching Ni/NbO₂/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R) memory device exhibits a low operation voltage, good ON/OFF ratio of 10⁵, uniform current distribution, excellent flexibility, and stable I-V curve at 85 °C. The good selection and memory properties of the flexible 1S1R memory device are highly promising for high-density and low-power flexible electronic applications.

【 授权许可】

Unknown