Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review

Micromachines

Tadaaki Nagao¹  EmmaP. Mukhokosi²  SaluruB. Krupanidhi²  GollakotaV. S. Manohar²  KarunaK. Nanda² 

[1] International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan;Materials Research Center, Indian Institute of Science, Bengaluru 560012, India;

关键词: device architecture;    photodetectors;    response speed;    mobility;    SnSe₂;    MoS₂;   

DOI  :  10.3390/mi11080750

来源: DOAJ

【 摘 要 】

While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 10⁴ A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe₂ and MoS₂ materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.

【 授权许可】

Unknown