Large-Area Ultraviolet Photodetectors Based on p-Type Multilayer MoS2 Enabled by Plasma Doping

Applied Sciences

Sian-Hong Tseng¹  Ming-Yen Lu¹  Xiao-Mei Zhang² 

[1] Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;Department of Mechanical Engineering, Tokyo Institute of Technology, Tokyo 1528550, Japan;

关键词: two-dimensional;    photodetection;    p-type doping;    plasma;    multilayers;   

DOI  :  10.3390/app9061110

来源: DOAJ

【 摘 要 】

Two-dimensional (2D) MoS2 has recently become of interest for applications in broad range photodetection due to their tunable bandgap. In order to develop 2D MoS2 photodetectors with ultrafast response and high responsivity, up-scalable techniques for realizing controlled p-type doping in MoS2 is necessary. In this paper, we demonstrate a p-type multilayer MoS2 photodetector with selective-area doping using CHF3 plasma treatment. Microscopic and spectroscopic characterization techniques, including atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), are used to investigate the morphological and electrical modification of the p-type doped MoS2 surface after CHF3 plasma treatment. Back-gated p-type MoS2 field-effect transistors (FETs) are fabricated with an on/off current ratio in the order of 103 and a field-effect mobility of 65.2 cm2V−1s−1. They exhibit gate-modulated ultraviolet photodetection with a rapid response time of 37 ms. This study provides a promising approach for the development of mild plasma-doped MoS2 as a 2D material in post-silicon electronic and optoelectronic device applications.

【 授权许可】

Unknown