Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications

Electronics

Yunheub Song¹  Shinyoung Kang¹  Myounggon Kang²  Juyoung Lee³ 

[1] Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea;Department of Electronics Engineering, Korea National University of Transportation, 50 Daehak-ro, Chungju-si, Chungbuk 380-702, Korea;Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Korea;

关键词: interfacial phase-change memory;    phase-change memory;    artificial synaptic device;    superlattice;    neuromorphic devices;   

DOI  :  10.3390/electronics9081268

来源: DOAJ

【 摘 要 】

In this paper, gradual and symmetrical long-term potentiation (LTP) and long-term depression (LTD) were achieved by applying the optimal electrical pulse condition of the interfacial phase-change memory (iPCM) based on a superlattice (SL) structure fabricated by stacking GeTe/Sb₂Te₃ alternately to implement an artificial synapse in neuromorphic computing. Furthermore, conventional phase-change random access memory (PCRAM) based on a Ge–Sb–Te (GST) alloy with an identical bottom electrode contact size was fabricated to compare the electrical characteristics. The results showed a reduction in the reset energy consumption of the GeTe/Sb₂Te₃ (GT/ST) iPCM by more than 69% of the GST alloy for each bottom electrode contact size. Additionally, the GT/ST iPCM achieved gradual conductance tuning and 90.6% symmetry between LTP and LTD with a relatively unsophisticated pulse scheme. Based on the above results, GT/ST iPCM is anticipated to be exploitable as a synaptic device used for brain-inspired computing and to be utilized for next-generation non-volatile memory.

【 授权许可】

Unknown