Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon Nanostructures

Nanoscale Research Letters

Liubomyr S. Monastyrskii¹  Igor B. Olenych¹  Yulia Yu. Horbenko²  Olena I. Aksimentyeva²  Maryan V. Partyka³ 

[1] Department of Electronics and Computer Technologies (Сhair of Radioelectronics and Computer Systems), Ivan Franko National University of Lviv;Physical and Colloidal Chemistry Department, Ivan Franko National University of Lviv;Solid State Physics Department, Ivan Franko National University of Lviv;

关键词: Porous silicon;    Reduced graphene oxide;    Hybrid structure;    Photosensitivity;    Current–voltage characteristics;    Impedance spectroscopy;   

DOI  :  10.1186/s11671-017-2043-7

来源: DOAJ

【 摘 要 】

Abstract In this work, the hybrid structures were created by electrochemical etching of silicon wafer and deposition of reduced graphene oxide (RGO) on the porous silicon (PS) layer. With the help of SEM and AFM, the formation of hybrid PS–RGO structure was confirmed. By means of current–voltage characteristic analysis and impedance spectroscopy, we studied electrical characteristics of PS–RGO structures. The formation of photosensitive electrical barriers in hybrid structures was revealed. Temporal parameters and spectral characteristics of photoresponse in the 400–1100-nm wavelength range were investigated. The widening of spectral range of photosensitivity of the hybrid structures in short-wavelength range in comparison with single-crystal silicon was revealed. The obtained results broaden the prospects of application of the PS–RGO structures in photoelectronics.

【 授权许可】

Unknown