Effects of Chamber Pressures on the Passivation Layer of Hydrogenated Nano-Crystalline Silicon Mixed-Phase Thin Film by Using Microwave Annealing

Electronics

Hung-Wei Wu¹  Jia-Hao Lin²  Shih-Kun Liu³  Wei-Chen Tien⁴  Cheng-Yuan Hung⁴ 

[1] Department of Electrical Engineering, Feng Chia University, Taichung 407802, Taiwan;Department of Electronic Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807618, Taiwan;Institute of Photonics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807618, Taiwan;Opto-Electronics Technology Section Energy and Agile System Department, Metal Industries Research & Development Centre, Kaohsiung 821011, Taiwan;

关键词: passivation;    microwave annealing;    nano-crystallite mixed-phase silicon thin film;   

DOI  :  10.3390/electronics10182199

来源: DOAJ

【 摘 要 】

This paper proposes the effects of chamber pressures on the passivation layer of hydrogenated nano-crystalline silicon (nc-Si:H) mixed-phase thin film using microwave annealing (MWA) to achieve a high-quality thin film. The use of 40.68 MHz very-high-frequency plasma-enhanced chemical vapor deposition (VHFPECVD) deposited the nc-Si:H mixed-phase thin film on the top and bottom of the n-type crystalline silicon substrate. The chamber pressures (0.2, 0.4, 0.6, and 0.8 Torr) of the VHFPECVD were critical factors in controlling the carrier lifetime of the symmetric structure. By using the VHFPECVD to deposit the nc-Si:H and using the MWA to enhance the quality of the symmetric structure, the deposited nc-Si:H’s properties of a crystalline volume fraction of 29.6%, an optical bandgap of 1.744 eV, and a carrier lifetime of 2942.36 μs were well achieved, and could be valuable in thin-film solar-cell applications.

【 授权许可】

Unknown