Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

Materials

Yu-Hsien Lin²  Yi-He Tsai²  Chung-Chun Hsu¹  Guang-Li Luo³  Yao-Jen Lee³  Chao-Hsin Chien¹ 

[1] Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 30010, Taiwan;Department of Electronic Engineering, National United University, Miaoli 36003, Taiwan;National Nano Device Laboratories, Hsinchu 30010, Taiwan;

关键词: germanium;    microwave annealing;    NiSiGe;    Schottky junction;   

DOI  :  10.3390/ma8115403

来源: mdpi

【 摘 要 】

In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si_0.57Ge_0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N₂ ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390°C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (I_ON/I_OFF) ratio of ~3 × 10⁵. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.

【 授权许可】

CC BY   
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