Voltage Pulse Driven VO2 Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons

Electronics

Ayrton A. Bernussi¹  Zhen Xu¹  Zhaoyang Fan² 

[1] Department of Electrical and Computer Engineering, Nano Tech Center, Texas Tech University, Lubbock, TX 79409, USA;School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85281, USA;

关键词: neuromorphic computation;    artificial neurons;    VO₂;    volatile resistive transition;    leaky integrate-and-fire;   

DOI  :  10.3390/electronics11040516

来源: DOAJ

【 摘 要 】

In a hardware-based neuromorphic computation system, using emerging nonvolatile memory devices as artificial synapses, which have an inelastic memory characteristic, has attracted considerable interest. In contrast, the elastic artificial neurons have received much less attention. An ideal material system that is suitable for mimicking biological neurons is the one with volatile (or mono-stable) resistive change property. Vanadium dioxide (VO₂) is a well-known material that exhibits an abrupt and volatile insulator-to-metal transition property. In this work, we experimentally demonstrate that pulse-driven two-terminal VO₂ devices behave in a leaky integrate-and-fire (LIF) manner, and they elastically relax back to their initial value after firing, thus, mimicking the behavior of biological neurons. The VO₂ device with a channel length of 20 µm can be driven to fire by a single long-duration pulse (>83 µs) or multiple short-duration pulses. We further model the VO₂ devices as resistive networks based on their granular domain structure, with resistivities corresponding to the insulator or metallic states. Simulation results confirm that the volatile resistive transition under voltage pulse driving is caused by the formation of a metallic filament in an avalanche-like process, while this volatile metallic filament will relax back to the insulating state at the end of driving pulses. The simulation offers a microscopic view of the dynamic and abrupt filament formation process to explain the experimentally observed LIF behavior. These results suggest that VO₂ insulator–metal transition could be exploited for artificial neurons.

【 授权许可】

Unknown