Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

Materials

WooChan Jin¹  Jun-Young Cho²  Euyheon Hwang²  Miyoung Kim²  Chan Park²  Seong-Hyeon Hong³  Seung-Hwan Bae⁴  Muhammad Siyar⁵ 

[1] Materials Engineering, National University of Sciences and Technology, Islamabad H–12, Pakistan;Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea;Department of Nano Science and Engineering, Kyungnam University, Changwon 51767, Korea;SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea;;School of Chemical &

关键词: thermoelectric;    tin selenide;    solid solution;    te substitution;    spark plasma sintering;   

DOI  :  10.3390/ma12233854

来源: DOAJ

【 摘 要 】

SnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and cost of fabricating a single crystal. It is highly desirable to improve the properties of polycrystalline SnSe whose TE properties are still not near to that of single crystal SnSe. In this study, in order to control the TE properties of polycrystalline SnSe, polycrystalline SnSe−SnTe solid solutions were fabricated, and the effect of the solid solution on the electrical transport and TE properties was investigated. The SnSe_1−xTe_x samples were fabricated using mechanical alloying and spark plasma sintering. X-ray diffraction (XRD) analyses revealed that the solubility limit of Te in SnSe_1−xTe_x is somewhere between x = 0.3 and 0.5. With increasing Te content, the electrical conductivity was increased due to the increase of carrier concentration, while the lattice thermal conductivity was suppressed by the increased amount of phonon scattering. The change of carrier concentration and electrical conductivity is explained using the measured band gap energy and the calculated band structure. The change of thermal conductivity is explained using the change of lattice thermal conductivity from the increased amount of phonon scattering at the point defect sites. A ZT of ~0.78 was obtained at 823 K from SnSe_0.7Te_0.3, which is an ~11% improvement compared to that of SnSe.

【 授权许可】

Unknown