Effect of off-stoichiometry on properties of tin selenide crystals

Bulletin of Materials Science

MOHIT TANNARANA^1¹ 

[1] Department of Physics, Sardar Patel University, Anand 388120, Gujarat, India^1

关键词: Crystal growth;    tin selenide;    secondary structure phase.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The tin selenide crystals with different proportions of Sn and Se were grown by a direct vapour-transport technique. The layer by layer growth of crystals from the vapour phase was promoted by screw dislocation mechanism. The powder X-ray diffraction (XRD) shows good crystallinity of grown compound. The XRD patterns of grown compounds are well-indexed to orthorhombic structure. In the off-stoichiometric compound, evidence of SnSe$_2$ secondary phase is observed due to excess of selenium. The morphological investigations were carried out using a Carl Zeiss optical microscope. The electron diffraction was also recorded from tiny flakes using a transmission electron microscope. The electrical resistivity both parallel and perpendicular to the c-axis was measured in the temperature range of 303–490 K and activation energy was also calculated using Arrhenius relation. The electrical study depicts the extrinsic semiconducting nature of grown compositions.

【 授权许可】

CC BY