Improved Photoresponse Characteristics of a ZnO-Based UV Photodetector by the Formation of an Amorphous SnO2 Shell Layer

Sensors

Uijin Jung¹  Bomseumin Jung¹  Wenhu Shen¹  Junhyuk Yoo²  Jinsub Park² 

[1] Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea;Department of Electronics & Computer Engineering, Hanyang University, Seoul 04763, Korea;

关键词: core–shell structure;    surface passivation;    nanostructure;    UV photodetector;   

DOI  :  10.3390/s21186124

来源: DOAJ

【 摘 要 】

Although ZnO nanostructure-based photodetectors feature a well-established system, they still present difficulties when being used in practical situations due to their slow response time. In this study, we report on how forming an amorphous SnO₂ (a-SnO₂) shell layer on ZnO nanorods (NRs) enhances the photoresponse speed of a ZnO-based UV photodetector (UV PD). Our suggested UV PD, consisting of a ZnO/a-SnO₂ NRs core–shell structure, shows a rise time that is 26 times faster than a UV PD with bare ZnO NRs under 365 nm UV irradiation. In addition, the light responsivity of the ZnO/SnO₂ NRs PD simultaneously increases by 3.1 times, which can be attributed to the passivation effects of the coated a-SnO₂ shell layer. With a wide bandgap (~4.5 eV), the a-SnO₂ shell layer can successfully suppress the oxygen-mediated process on the ZnO NRs surface, improving the photoresponse properties. Therefore, with a fast photoresponse speed and a low fabrication temperature, our as-synthesized, a-SnO₂-coated ZnO core–shell structure qualifies as a candidate for ZnO-based PDs.

【 授权许可】

Unknown