A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

Nanophotonics

article

Teng-Fei Zhang¹  Guo-An Wu¹  Jiu-Zhen Wang¹  Yong-Qiang Yu¹  Deng-Yue Zhang¹  Dan-Dan Wang¹  Jing-Bo Jiang¹  Jia-Mu Wang¹  Lin-Bao Luo¹ 

[1] School of Microelectronics, Hefei University of Technology

关键词: graphene;    Schottky junction;    UV photodetector;    responsivity;    surface passivation;   

DOI  :  10.1515/nanoph-2016-0143

学科分类：社会科学、人文和艺术（综合）

来源: De Gruyter

【 摘 要 】

In this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×10 4 A/W and 10 5 , respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlO x film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

【 授权许可】

CC BY