Nanophotonics | |
A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction | |
article | |
Teng-Fei Zhang1  Guo-An Wu1  Jiu-Zhen Wang1  Yong-Qiang Yu1  Deng-Yue Zhang1  Dan-Dan Wang1  Jing-Bo Jiang1  Jia-Mu Wang1  Lin-Bao Luo1  | |
[1] School of Microelectronics, Hefei University of Technology | |
关键词: graphene; Schottky junction; UV photodetector; responsivity; surface passivation; | |
DOI : 10.1515/nanoph-2016-0143 | |
学科分类:社会科学、人文和艺术(综合) | |
来源: De Gruyter | |
【 摘 要 】
In this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×10 4 A/W and 10 5 , respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlO x film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.
【 授权许可】
CC BY
【 预 览 】
Files | Size | Format | View |
---|---|---|---|
RO202107200003839ZK.pdf | 968KB | download |