CHARACTERIZATION OF NITROGENATED GALLIUM PHOSPHIDE FILMS

Momento

Miguel Melendez Lira¹  Máximo López López²  Alvaro Pulzara Mora³ 

[1] Departamento de Fsica, Centro de Investigacion y Estudios Avanzados del IPN, Mexico 07000, Distrito Federal, Mexico.;Departamento de Física, Centro de Investigación y Estudios Avanzados del IPN, México 07000, Distrito Federal, México;Laboratorio de Nanoestructuras Semiconductoras, Grupo de Investigacion en Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia Sede Manizales, A.A. 127;

关键词: Pulverización catódica;    GaPN;    Raman;    SEM.;   

DOI  :  

来源: DOAJ

【 摘 要 】

GaPN thin films were deposited on Silicon (100) substrates, in the range of 420-520 oC by r-f magnetron sputtering employing a nitrogen–argon atmosphere. According to X-ray measurements the GaPN films are polycrystalline with preferential orientation along of (111) direction. High resolution scanning electron microscopy (HRSEM) images taken in cross sectional show a columnar growth. Raman spectra show TO and LO vibrational phonon modes at 370 and 408 cm-1 associated to GaP, and a local phonon mode around 390 cm-1, likely related with N-induced disorder or N-cluster formation in GaP host.

【 授权许可】

Unknown