Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications

Materials

Yoseop Lee¹  Seung-Eon Ahn¹  Woori Ham¹  Sungmun Song¹ 

[1] Department of Nano & Semiconductor Engineering, Korea Polytechnic University, Siheung 15073, Korea;

关键词: FTJ;    ferroelectric;    non-volatile memory;   

DOI  :  10.3390/ma15062251

来源: DOAJ

【 摘 要 】

Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of their high remanent polarization (below 10 nm) and high compatibility with complementary metal-oxide-semiconductor (CMOS) processes. In this study, a Si-doped HfO₂-based FTJ device with a metal-ferroelectric-insulator-semiconductor (MFIS) structure was proposed to maximize the tunneling electro-resistance (TER) effect. The potential barrier modulation effect under applied varying voltage was analyzed, and the possibility of its application as a non-volatile memory device was presented through stability assessments such as endurance and retention tests.

【 授权许可】

Unknown