Manufacturing Issues of BEOL CMOS-MEMS Devices

IEEE Access

Juan Valle¹  Olivier Gibrat²  Daniel Fernandez³  Jordi Madrenas⁴ 

[1] Department of Electronic Engineering, Universitat Polit&x00E8;Edifici Cn. Facultat Ciències Nord, Institut de F&x00ED;cnica de Catalunya, Barcelona, Spain;sica d&x2019;

关键词: CMOS-MEMS;    design techniques;    hydrogen fluoride;    silicon oxide;    vapor-HF;    release;   

DOI  :  10.1109/ACCESS.2021.3086867

来源: DOAJ

【 摘 要 】

In this paper we present a comprehensive report on the issues found during the manufacturing of high-yield CMOS-MEMS sensors based on vapor-phase hydrogen fluoride (vapor- $HF$ ) oxide etching. During the study we have identified the main issues affecting CMOS-MEMS high-yield manufacturing regarding the silicon oxide as a sacrificial material, the passivation as a release mask, the BEOL as structural material for MEMS design and the aluminum-sputtering as a sealing layer for the MEMS cavity. This study has been carried out by systematically analyzing over 100 full wafers in 10 different runs on four different foundries using ${\mathrm {0.5~ \mu m }}$ , ${\mathrm {0.18~ \mu m }}$ and ${\mathrm {0.15~ \mu m }}$ CMOS processes, containing both test structures and full-sensor designs.

【 授权许可】

Unknown