UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors

Proceedings

Tilman Sauerwald¹  Andreas Schütze¹  Donatella Puglisi²  Anita Lloyd Spetz²  Mike Andersson²  Manuel Bastuck² 

[1] Lab for Measurement Technology, Saarland University, 66123 Saarbrücken, Germany;Sensor and Actuator Systems, IFM, Linköping University, 58183 Linköping, Sweden;

关键词: gas sensors;    SiC-FET;    dynamic operation;    gate bias cycled operation;    linear discriminant analysis;   

DOI  :  10.3390/proceedings2130999

来源: DOAJ

【 摘 要 】

Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.

【 授权许可】

Unknown