UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors

Proceedings

Spetz, Anita Lloyd¹  Puglisi, Donatella²  Schütze, Andreas³  Bastuck, Manuel⁴ 

[1] Author to whom correspondence should be addressed.;Lab for Measurement Technology, Saarland University, 66123 Saarbrücken, Germany;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018;Sensor and Actuator Systems, IFM, Linköping University, 58183 Linköping, Sweden

关键词: gas sensors;    SiC-FET;    dynamic operation;    gate bias cycled operation;    linear discriminant analysis;   

DOI  :  10.3390/proceedings2130999

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.

【 授权许可】

CC BY