Analysis and Optimization of Power MOSFETs Shaped Switching Transients for Reduced EMI Generation

IEEE Access

Qishuang Ma¹  Yuchen Wang¹  Ping Xu¹  Tongkai Cui¹ 

[1] School of Automation Science and Electrical Engineering, Beihang University, Beijing, China;

关键词: Closed-loop gate drive;    electromagnetic interference;    interference suppression;    spectral analysis;    switching converters;    switching transient;   

DOI  :  10.1109/ACCESS.2017.2758443

来源: DOAJ

【 摘 要 】

The abrupt change in current or voltage caused by the rapid switching action of power semiconductor devices will generate high-frequency electromagnetic interference (EMI) and needs to be located as the primary interference sources in power electronics. This paper deals with interference suppression on the basis of the study of shaped switching transients in switching waveforms and closed-loop gate drive method for power MOSFETs. The characteristics of switching waveforms with arbitrary switching transients are investigated in both timeand frequency-domain. In addition, conditions of constructing a switching waveform with optimized switching transients are put forward. An optimized Gaussian switching waveform with infinite successive derivatives is proposed which provides the deepest decreasing rate in the interference source spectrum for a given switching time. Compared with a trapezoidal waveform with singleslope transients, the proposed switching waveform has better interference suppression at high frequencies. Meanwhile, a closed-loop gate control prototype with on-state resistance compensation is presented to shape the switching transients of power MOSFETs. The simulated and experimental results show that the proposed controller is successfully implemented to shape the drain-source voltage into an optimized Gaussian reference. Spectrum comparisons show that the EMI generation is effectively suppressed as expected.

【 授权许可】

Unknown