Development of X-Band Transceiver MMIC’s Using GaN Technology

Advanced Electromagnetics

F. Kocer¹  I. Turan¹  A. Gundel¹  O. A. Civi¹  O. Memioglu¹  O. Kazan¹  A. Karakuzulu¹ 

[1] Middle East Technical University;

关键词: MMIC;    GaN;    PA;    LNA;    Switch;    X-band;   

DOI  :  10.7716/aem.v8i2.1012

来源: DOAJ

【 摘 要 】

This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.

【 授权许可】

Unknown