Transport Properties of the Two-Dimensional Hole Gas for H-Terminated Diamond with an Al2O3 Passivation Layer

Crystals

Chuangjie Zhou¹  Cui Yu¹  Zezhao He¹  Zhihong Feng¹  Mengyu Ma¹  Aimin Bu¹  Jianchao Guo¹  Hongxing Wang² 

[1] National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China;

关键词: diamond;    carrier mobility;    two-dimensional hole gas;    carrier scattering mechanisms;   

DOI  :  10.3390/cryst12030390

来源: DOAJ

【 摘 要 】

Diamonds are thought to be excellent candidates of next-generation semiconductor materials for high power and high frequency devices. A two-dimensional hole gas in a hydrogen-terminated diamond shows promising properties for microwave power devices. However, high sheet resistance and low carrier mobility are still limiting factors for the performance improvement of hydrogen-terminated diamond field effect transistors. In this work, the carrier scattering mechanisms of a two-dimensional hole gas in a hydrogen-terminated diamond are studied. Surface roughness scattering and ionic impurity scattering are found to be the dominant scattering sources. Impurity scattering enhancement was found for the samples after a high-temperature Al₂O₃ deposition process. This work gives some insight into the carrier transport of hydrogen-terminated diamonds and should be helpful for the development of diamond field effect transistors.

【 授权许可】

Unknown