Effects of coaxial through-silicon via on carrier mobility along [100] and [110] crystal directions of (100) silicon

IEICE Electronics Express

Zhangming Zhu¹  Fengjuan Wang²  Ningmei Yu²  Xiangkun Yin¹  Yintang Yang¹ 

[1] School of Microelectronics, Xidian University;Department of Electronics Engineering, Xi’an University of Technology

关键词: coaxial through-silicon via (TSV);    anisotropic silicon;    carrier mobility;    finite element analysis (FEA);    keep-out-zone (KOZ);   

DOI  :  10.1587/elex.12.20150434

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(11)Cited-By(2)This letter investigates the effects of coaxial through-silicon via (TSV) on carrier motilities in the channels of nMOS and pMOS with channels along [100] and [110] orientations on (100) silicon. The keep-out zone (KOZ) induced by coaxial TSV and the effective area occupied by TSV and surrounding KOZ are evaluated. The results show that, the effective area is reduced by �?92% by aligning the channels of pMOS along [100] orientation and nMOS along [110] orientation than the opposite orientations. The absolute error ranges from �?12.5 µm to 7.2 µm as the anisotropic property of silicon are neglected.

【 授权许可】

Unknown