Study and Analysis of Simple and Precise of Contact Resistance Single-Transistor Extracting Method for Accurate Analytical Modeling of OTFTs Current-Voltage Characteristics: Application to Different Organic Semiconductors

Crystals

Noweir Ahmad Alghamdi¹ 

[1] Department of Physics, Faculty of Science, Albaha University, Al Bahah 65799, Saudi Arabia;

关键词: OTFTs;    contact resistance;    transition-voltage method;    transfer line method;    modeling;   

DOI  :  10.3390/cryst11121448

来源: DOAJ

【 摘 要 】

Contact resistance (R_c) characterizes the interface of source-drain electrodes/organic semiconductors and controls the injection efficiency of carriers in organic thin-film transistors (OTFTs). This research paper presents and assesses two methods for extracting the value of the contact resistance from the measured current-voltage characteristics of OTFTs made with various p-type organic semiconductors as active layers. These two methods are the transition voltage method (TVM) and the transfer line method (TLM). The obtained R_c values by the TVM method are in fair agreement with those obtained by TLM, with a maximum percentage of difference around 10%, demonstrating the accuracy of the used transition-voltage method. An analytical model was employed to calculate output characteristics in the linear regime of OTFTs made with various organic semiconductors using the contact resistance values obtained by the transition voltage method. The calculated results are in reasonably good agreement with the experimental ones of each fabricated device, which affirms the ability of the used model to characterize the charge transport correctly in these types of devices. It can be concluded that the used TVM method is not only an easy and practical method, but also a precise way for extracting R_c in OTFTs produced using different organic semiconductor materials.

【 授权许可】

Unknown