Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron

Frontiers in Neuroscience

Woo Seok Yi¹  Jae Joon Kim¹  Han Sol Jun²  Dong Won Kim²  Jong Ung Baek²  Jin Young Choi³  Jea Gun Park⁴  Kei Ashiba⁴ 

[1] Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang, South Korea;Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, South Korea;MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul, South Korea;Wafer Engineering Department, SUMCO Corporation, Imari, Japan;

关键词: neuromorphic;    MRAM;    spiking neuron;    spiking neural network;    artificial neuron;   

DOI  :  10.3389/fnins.2020.00309

来源: DOAJ

【 摘 要 】

A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resistance change gradually increased with the input spike number. This behavior occurred when the spin electron directions between double Co2Fe6B2 free and pinned layers in the p-STT-based neuron were switched from parallel to antiparallel states. In addition, a neuron circuit for integrate-and-fire operation was proposed. Finally, pattern-recognition simulation was performed for a single-layer SNN.

【 授权许可】

Unknown