All-Inorganic Red-Light Emitting Diodes Based on Silicon Quantum Dots

Crystals

Batu Ghosh¹  Naoto Shirahata² 

[1] Department of Physics, Triveni Devi Bhalotia College, Raniganj, West Bengal 713383, India;International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan;

关键词: light emitting diode;    quantum dots;    silicon;    solution-process;    all-inorganic device;   

DOI  :  10.3390/cryst9080385

来源: DOAJ

【 摘 要 】

We report herein an all-inorganic quantum dot light emitting diode (QLED) where an optically active layer of crystalline silicon (Si) is mounted. The prototype Si-QLED has an inverted device architecture of ITO/ZnO/QD/WO₃/Al multilayer, which was prepared by a facile solution process. The QLED shows a red electroluminescence, an external quantum efficiency (EQE) of 0.25%, and luminance of 1400 cd/m². The device performance stability has been investigated when the device faces different humidity conditions without any encapsulation. The advantage of using all inorganic layers is reflected in stable EQE even after prolonged exposure to harsh conditions.

【 授权许可】

Unknown