2D layered noble metal dichalcogenides (Pt, Pd, Se, S) for electronics and energy applications

Materials Today Advances

J. Chen¹  J.H. Warner²  W. Xu³  E. Chen³ 

[1] Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom;Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom;Oxford Suzhou Centre for Advanced Research, Suzhou, 215123, Jiangsu Province, PR China;

关键词: Two-dimensional (2D) materials;    Transition metal dichalcogenides (TMDs);    Electronic properties;    Electronic devices;   

DOI  :  

来源: DOAJ

【 摘 要 】

The layered materials, two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted increasing attention because of their unique properties in the atomic structures, bandgaps, electronic properties, electrochemistry activities, and the potential applications in devices. Till now, most research has focused on the group VIB metal TMDs, like molybdenum disulfide (MoS2) and tungsten disulfide (WS2), whereas TMDs composed of other groups metals are not widely explored. Herein, we present and summarize the group 10 transition metal platinum (Pt) and palladium (Pd) dichalcogenides, like platinum diselenide (PtSe2), palladium diselenide (PdSe2), platinum disulfide (PtS2) and palladium disulfide (PdS2) to discuss their special points as the published discussion on group VIB metal TMDs, and find the similarities and the differences between the metals. This review will focus on the group 10 noble metal dichalcogenides of their atomic structure, synthetic approaches, defects and dopants, layer dependent band structure, electronic properties, electrochemistry activities and the broadband opto-electronic devices.

【 授权许可】

Unknown