Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes

Nanomaterials

Jeongkyun Roh¹  Myeongjin Park²  Hyunkoo Lee³  Jaehoon Lim⁴  Donggu Lee⁵ 

[1] Department of Electrical Engineering, Pusan National University, Busan 46241, Korea;Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Korea;Department of Electronics Engineering, Sookmyung Women’s University, Seoul 04310, Korea;Department of Energy Science, Center for Artificial Atoms, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, Korea;Realistic Media Research Center, Innovative Technology Research Division, Gumi Electronics & Information Technology Research Institute (GERI), Gumi, Gyeonsangbuk-do 39253, Korea;

关键词: quantum dot (QD);    light emitting diode (LED);    metal oxide;    double electron transport layer (ETL);    SnO2 nanoparticles;   

DOI  :  10.3390/nano10040726

来源: DOAJ

【 摘 要 】

The performance of colloidal quantum dot light-emitting diodes (QD-LEDs) have been rapidly improved since metal oxide semiconductors were adopted for an electron transport layer (ETL). Among metal oxide semiconductors, zinc oxide (ZnO) has been the most generally employed for the ETL because of its excellent electron transport and injection properties. However, the ZnO ETL often yields charge imbalance in QD-LEDs, which results in undesirable device performance. Here, to address this issue, we introduce double metal oxide ETLs comprising ZnO and tin dioxide (SnO₂) bilayer stacks. The employment of SnO₂ for the second ETL significantly improves charge balance in the QD-LEDs by preventing spontaneous electron injection from the ZnO ETL and, as a result, we demonstrate 1.6 times higher luminescence efficiency in the QD-LEDs. This result suggests that the proposed double metal oxide ETLs can be a versatile platform for QD-based optoelectronic devices.

【 授权许可】

Unknown