Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

Coatings

Simona Căprărescu¹  Viorel Şerban²  Carmen Lazău³  Corina Orha³  Mircea Nicolaescu³  Cornelia Bandas³ 

[1] Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, Faculty of Applied Chemistry and Materials Science, University Politehnica of Bucharest, Polizu Street No. 1-7, 011061 Bucharest, Romania;Department of Materials and Manufacturing Engineering, Faculty of Mechanical Engineering, University Politehnica of Timisoara, Mihai Viteazu Street, No. 1, 300222 Timisoara, Romania;National Institute for Research and Development in Electrochemistry and Condensed Matter Timisoara, Dr. Aurel Paunescu Podeanu No.144, 300569 Timisoara, Romania;

关键词: heterojunction;    UV photodetector;    TiO₂-CuMnO₂;   

DOI  :  10.3390/coatings11111380

来源: DOAJ

【 摘 要 】

The heterojunction based on n-TiO₂ nanolayer/p-CuMnO₂ thin film was achieved using an efficient two-step synthesis process for the fabrication of a UV photodetector. The first step consisted of obtaining the TiO₂ nanolayer, which was grown on titan foil by thermal oxidation (Ti-TiO₂). The second step consisted of CuMnO₂ thin film deposition onto the surface of Ti-TiO₂ using the Doctor Blade method. Techniques such as X-ray diffraction, UV-VIS analysis, SEM, and AFM morphologies were used for the investigation of the structural and morphological characteristics of the as-synthesized heterostructures. The Mott–Schottky analysis was performed in order to prove the n-TiO₂/p-CuMnO₂ junction. The I-V measurements of the n-TiO₂ nanolayer/p-CuMnO₂ thin film heterostructure confirm its diode characteristics under dark state, UV and visible illumination conditions. The obtained heterojunction, which is based on two types of semiconductors with different energy band structures, improves the separating results of charges, which is very important for high-performance UV photodetectors.

【 授权许可】

Unknown