Gas Sensing Characteristics of a WO3 Thin Film Prepared by a Sol-Gel Method

Proceedings

Mitsuaki Yano¹  Tomoya Iwata¹  Taichi Inoue¹  Satoshi Murakami¹  Ryouma Kamei¹  Kazuto Koike¹ 

[1] Nanomaterials and Microdevices Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585, Japan;

关键词: gas sensor;    sensing mechanism;    NO gas;    WO₃;    sol-gel method;   

DOI  :  10.3390/proceedings2130723

来源: DOAJ

【 摘 要 】

Preparation and characterization of a WO₃-based thin film gas sensor are reported. The WO₃ film was prepared on a polished alumina substrate by a sol-gel method using an aqueous mixture solution of ammonium metatungstate hydrate and poly-vinyl alcohol, and fabricated into the gas sensor by forming interdigital electrodes on the surface. The characterization was conducted by measuring the electrical resistance change in NO, H₂, and NH₃ ambient as a function of gas concentration. It is revealed that the sensor has a specific sensitivity to NO, NO is detected as oxidizing gas although it is expected to be reducing gas, and the resistance changes with gas concentration in accordance with the Langmuir isotherm plot.

【 授权许可】

Unknown