Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutron transmutation doping

Progress in Natural Science: Materials International

Tiecheng Lu¹  Youwen Hu¹  Shaobo Dun¹  Wei Liu¹  Issai Shlimak²  Qingyun Chen³ 

[1] Department of Physics and Key Laboratory for Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China;Minerva Center and Jack and Pearl Resnick Institute of Advanced Technology, Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel;School of National Defence and Technology, Southwest University of Science and Technology, Mianyang 621010, China;

关键词: Ge nanocrystals;    Ion implantation;    Neutron transmutation doping;    Photoluminescence property;   

DOI  :  10.1016/j.pnsc.2014.04.005

来源: DOAJ

【 摘 要 】

Nanocrystalline 74Ge embedded SiO2 films were prepared by employing ion implantation and neutron transmutation doping methods. Transmission electron microscopy, energy dispersive x-ray spectroscopy, and photoluminescence of the obtained samples were measured. The existence of As dopants transmuted from 74Ge is significant to guarantee the uniformity and higher volume density of Ge nanocrystals by tuning the system׳s crystallinity and activating mass transfer process. It was observed that the photoluminescence intensity of Ge nanocrystals increased first then decreased with the increase of arsenic concentration. The optimized fluence of neutron transmutation doping was found to be 5.5×1017 cm−2 to achieve maximum photoluminescence emission in Ge embedded SiO2 film. This work opens a route in the three-dimensional nanofabrication of uniform Ge nanocrystals.

【 授权许可】

Unknown