Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

IEEE Journal of the Electron Devices Society

Pierpaolo Palestri¹  Sebastiano Strangio¹  DAVID Esseni¹  Luca Selmi¹  Felice Crupi²  Siegfried Mantl³  Simon Richter³  Qing-Tai Zhao⁴ 

[1] Dipartimento di Ingegneria ElettricaGestionale e Meccanica, Università degli Studi di Udine, Udine, Italy;Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica, Università della Calabria, Arcavacata di Rende, Italy;Peter Grünberg Institute-9, JARA-FIT, Forschungszentrum Jülich, J&x00FC;lich, Germany;

关键词: SRAM;    TFET;    TCAD;    VLSI;   

DOI  :  10.1109/JEDS.2015.2392793

来源: DOAJ

【 摘 要 】

We use mixed device-circuit simulations to predict the performance of 6T static RAM (SRAM) cells implemented with tunnel-FETs (TFETs). Idealized template devices are used to assess the impact of device unidirectionality, which is inherent to TFETs and identify the most promising configuration for the access transistors. The same template devices are used to investigate the V_DD range, where TFETs may be advantageous compared to conventional CMOS. The impact of device ambipolarity on SRAM operation is also analyzed. Realistic device templates extracted from experimental data of fabricated state-of-the-art silicon pTFET are then used to estimate the performance gap between the simulation of idealized TFETs and the best experimental implementations.

【 授权许可】

Unknown