FEM Simulation of THz Detector Based on Sb and Bi88Sb12 Thermoelectric Thin Films

Applied Sciences

AlexeiV. Asach¹  AnastasiiaS. Tukmakova¹  IvanL. Tkhorzhevskiy¹  AnnaV. Novotelnova¹  NatallyaS. Kablukova²  AntonD. Zaitsev³  MikhailK. Khodzitsky³  PetrS. Demchenko³ 

[1] Faculty of Cryogenic Engineering, ITMO University, 197101 Saint-Petersburg, Russia;International Scientific and Research Institute of Bioengineering, ITMO University, 197101 Saint-Petersburg, Russia;Terahertz Biomedicine Laboratory, ITMO University, 197101 Saint-Petersburg, Russia;

关键词: thermoelectric;    detector;    terahertz;    fem;    finite element simulation;    bismuth;    antimony;   

DOI  :  10.3390/app10061929

来源: DOAJ

【 摘 要 】

A terahertz (THz) detector based on thermoelectric thin films was simulated using the finite elements method. The thermoelectric circuit consisted of $Sb$ and $B{i}_{88}S{b}_{12}$ 150-nm films on the mica substrate. $Sb$ , $B{i}_{88}S{b}_{12}$ , and mica-substrate properties have been measured experimentally in the THz frequency range. The model of electromagnetic heating was used in order to estimate possible heating of $Sb$ - $B{i}_{88}S{b}_{12}$ contact. THz radiation power varied from 1 $\mathsf{\mu }$ W to 50 mW, and frequency varied in the range from 0.3 to 0.5 THz. The calculations showed a temperature difference of up to 1 K, voltage up to 0.1 mV, and responsivity of several mVW ${}^{-1}$ . The results show that thin $Sb$ and $Bi-Sb$ thermoelectric films can be used for THz radiation detection at room temperatures.

【 授权许可】

Unknown