Improved Resistive Switching Observed in Ti/Zr3N2/p-Si Capacitor via Hydrogen Passivation

IEEE Access

Doowon Lee¹  Hee-Dong Kim¹  Dongjoo Bae¹  Sungho Kim¹ 

[1] Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul, Republic of Korea;

关键词: Hydrogen passivation;    rapid thermal annealing;    resistive switching;    self-rectifying;    Zr₃N₂;    nitride trap density;   

DOI  :  10.1109/ACCESS.2022.3142368

来源: DOAJ

【 摘 要 】

Charge-trap based resistive switching (RS) has attracted attention in the resistive random-access memory (RRAM) industry due to its gradual RS behavior for multi-level and synaptic applications. In this work, in order to lower the operating current level closely related to device’s degradation, we applied a hydrogen passivation to Zr₃N₂ based RRAM devices and investigated the correlation between current level and trap density, such as an interface trap density ( $\text{N}_{\mathrm {it}}$ ) at the Zr $_{3}\text{N}_{2}/p$ -Si layer and nitride trap density ( $\text{N}_{\mathrm {nt}}$ ) within Zr₃N₂ films, for memory cells annealed in conventional N₂ gas as well as H₂ gas. Compared to the N₂-annealed sample, after H₂ annealing, $\text{N}_{\mathrm {it}}$ is lowered by the hydrogen passivation effect, which results in a reduction of both current level at high resistive state (HRS) and variation of HRS and low resistive state (LRS). As a result, in the H₂ annealed Zr₃N₂ RRAM cell, we observed a lower operation voltage/current, longer endurance, and larger read margin due to the hydrogen passivation effect.

【 授权许可】

Unknown