Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

Micromachines

Jianxiang Tang¹  Youlei Sun¹  Yifei Huang¹  Xiaofei Kuang¹  Wenju Wang¹  Ying Wang¹ 

[1] Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China;

关键词: edge termination;    silicon carbide (SiC);    junction termination extension (JTE);    breakdown voltage (BV);   

DOI  :  10.3390/mi9120610

来源: DOAJ

【 摘 要 】

In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical simulations. Step-DZ-JTE greatly reduces the sensitivity of breakdown voltage (BV) and surface charges (SC). For a 30-μm thick epi-layer, the optimized Step-DZ-JTE shows 90% of the theoretical BV with a wide tolerance of 12.2 × 10¹² cm⁻² to the JTE dose and 85% of the theoretical BV with an improved tolerance of 3.7 × 10¹² cm⁻² to the positive SC are obtained. Furthermore, when combined with the field plate technique, the performance of the Step-DZ-JTE is further improved.

【 授权许可】

Unknown