The Simulation Study of the SOI Trench LDMOS With Lateral Super Junction

IEEE Journal of the Electron Devices Society

卷:6

Weizhong Chen¹  Yi Huang¹  Lijun He¹  Zhengsheng Han² 

[1] College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing, China;

[2] Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

关键词: Lateral double diffused metal oxide semiconductor (LDMOS);    breakdown voltage (BV);    specific on resistance (Ron,sp);    Baliga’s figure of merit (FOM);   

DOI  :  10.1109/JEDS.2018.2842236

来源: DOAJ

【 摘 要 】

A novel lateral double diffused metal oxide semiconductor (LDMOS) with trench oxide layer, featuring a lateral super junction structure based on the silicon-on-insulator technology is proposed. On the one hand, the lateral super junction combined with the TOL can enhance both the surface and the bulk electric field of the N-drift by the charge compensation. Thus, the breakdown voltage (BV) is improved. On the other hand, the N-Pillar of the lateral super junction provides another current channel for electrons at the forward conduction state, thus the Specific on resistance (R_on,sp) is decreased. As the simulation results show, the proposed LDMOS exhibits trapezoidal electric field distribution with BV of 422V, and double electron channels with R_on,sp of 30.7 mΩ·cm², thus the figure of merit (FOM) (FOM = BV²/R_on,sp, Baliga's FOM) of 5.82 MW/cm² is achieved, breaking through the silicon limit.

【 授权许可】

Unknown