Engineering Porous Silicon Nanowires with Tuneable Electronic Properties

Condensed Matter

Alessandro D’Elia¹  Augusto Marcelli²  Nicola Pinto³  AndreaDi Cicco³  S.Javad Rezvani³  Roberto Gunnella³ 

[1] Consiglio Nazionale delle Ricerche (IOM), Edificio Q2, Area Science Park, Strada Statale 14, km 163,5, 34149 Basovizza, Italy;Istituto Nazionale di Fisica Nucleare - Laboratori Nazionali di Fisica Nucleare, Via Enrico Fermi 54, 00044 Frascati, Italy;School of Science and Technology, Physics Division, University of Camerino, Via Madonna delle Carceri 9, 62032 Camerino, Italy;

关键词: nanowires;    semiconductors;    Raman;    electronic structure;    X-ray absorption spectroscopy;   

DOI  :  10.3390/condmat5040057

来源: DOAJ

【 摘 要 】

Structural and electronic properties of silicon nanowires with pre-designed structures are investigated. Wires with distinct structure were investigated via advanced spectroscopic techniques such as X-ray absorption spectroscopy and Raman scattering as well as transport measurements. We show that wire structures can be engineered with metal assisted etching fabrication process via the catalytic solution ratios as well as changing doping type and level. In this way unique well-defined electronic configurations and density of states are obtained in the synthesized wires leading to different charge carrier and phonon dynamics in addition to photoluminescence modulations. We demonstrate that the electronic properties of these structures depend by the final geometry of these systems as determined by the synthesis process. These wires are characterized by a large internal surface and a modulated DOS with a significantly high number of surface states within the band structure. The results improve the understanding of the different electronic structures of these semiconducting nanowires opening new possibilities of future advanced device designs.

【 授权许可】

Unknown