Porous Silicon Carbide for MEMS

Proceedings

Ulrich Schmid¹  Markus Leitgeb¹  Christopher Zellner¹  Georg Pfusterschmied¹  Michael Schneider¹ 

[1] Institute of Sensor and Actuator Systems, TU Wien, Gusshausstrasse 27-29, 1040 Vienna, Austria;

关键词: metal assisted etching;    Silicon Carbide;    chemical vapor deposition;   

DOI  :  10.3390/proceedings1040297

来源: DOAJ

【 摘 要 】

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed by immersing the Pt coated samples into an etching solution containing sodium persulphate and hydrofluoric acid. UV light irradiation was necessary for charge carrier generation while the Pt served as local cathode. The generated porous areas can be used for the generation of integrated cavities in the single crystalline SiC substrates when covered with a chemical vapor deposited thin film of poly-crystalline SiC.

【 授权许可】

Unknown