Electronics | |
Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices | |
Óscar G. Ossorio1  Salvador Dueñas1  Helena Castán1  Héctor García1  Guillermo Vinuesa1  Jonathan Boo1  Benjamín Sahelices2  Francesca Campabadal3  Mireia B. González3  | |
[1] Departamento Electricidad y Electrónica, University of Valladolid, Paseo de Belén 15, 47011 Valladolid, Spain;Departamento Informática, University of Valladolid, Paseo de Belén 15, 47011 Valladolid, Spain;Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain; | |
关键词: resistive switching; ReRAM devices; neuromorphic computing; conduction mechanisms; | |
DOI : 10.3390/electronics10222816 | |
来源: DOAJ |
【 摘 要 】
In the attempt to understand the behavior of HfO
【 授权许可】
Unknown