Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices

Electronics

Óscar G. Ossorio¹  Salvador Dueñas¹  Helena Castán¹  Héctor García¹  Guillermo Vinuesa¹  Jonathan Boo¹  Benjamín Sahelices²  Francesca Campabadal³  Mireia B. González³ 

[1] Departamento Electricidad y Electrónica, University of Valladolid, Paseo de Belén 15, 47011 Valladolid, Spain;Departamento Informática, University of Valladolid, Paseo de Belén 15, 47011 Valladolid, Spain;Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain;

关键词: resistive switching;    ReRAM devices;    neuromorphic computing;    conduction mechanisms;   

DOI  :  10.3390/electronics10222816

来源: DOAJ

【 摘 要 】

In the attempt to understand the behavior of HfO${}_2$-based resistive switching devices at low temperatures, TiN/Ti/HfO${}_2$/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperature, the device was cooled in a cryostat to carry out 100 current–voltage cycles at several temperatures ranging from the “liquid nitrogen temperature” to 350 K. The measurements showed a semiconducting behavior in high and low resistance states. In the low resistance state, a hopping conduction mechanism was obtained. The set and reset voltages increased when temperature decreased because the thermal energies for oxygen vacancies and ions were reduced. However, the temperature did not influence the power absorbed in the reset transition, indicating the local temperature in the filament controls the transition. The set transition turned from gradual to abrupt when decreasing the temperature, due to a positive feedback between the current increase and the Joule heating at low temperatures.

【 授权许可】

Unknown