Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application

iScience

卷:25

Satishchandra Ogale¹  Ramamoorthy Boomishankar²  Neetu Prajesh²  Swati Parmar³  Minal Wable³  Suresh Gosavi⁴  Ram Janay Choudhary⁵ 

[1] Corresponding author;

[2] Department of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India;

[3] Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India;

[4] Department of Physics, Savitribai Phule Pune University, Pune, Maharashtra 411007, India;

[5] UGC-DAE Consortium for Scientific Research, Indore 452001, India;

关键词: Materials science;    Materials synthesis;    Nanomaterials;   

DOI  :  

来源: DOAJ

【 摘 要 】

Summary: High-quality growth of MoS2-xNx films is realized on single-crystal c-Al2O3 substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1Tʹ/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1Tʹ phase component due to the incorporation of covalently bonded N-doping in MoS2 lattice, inducing compressive strain. Interestingly, the film deposited at 300 mTorr NH3 shows ∼80% 1Tʹ phase. The transport measurements performed on MoS2-xNx films deposited at 300 mTorr NH3 display very low room temperature resistivity of 0.03 mΩ-cm which is 100 times enhanced over the undoped MoS2 grown under comparable conditions. A triboelectric nanogenerator (TENG) device containing biphasic MoS2-xNx film as an electron acceptor exhibits a clear enhancement in the output voltage as compared to the pristine MoS2. Device architecture, p-type N doping in MoS2 lattice, favorably increased work-function, multiphasic component of MoS2, and increased surface roughness synergistically contribute to superior TENG performance.

【 授权许可】

Unknown