A Simplified Method for Extracting Parasitic Inductances of MOSFET-Based Half-Bridge Circuit

IEEE Access

卷:9

Jun Zhai¹  Zhong Yang¹  Anjian Zhou¹  Chuang Bi²  Zhangyong Chen³  Rongqiang Zhong³  Yong Chen³ 

[1] Chongqing Changan New Energy Automobile Technology Company Ltd., Chongqing, China;

[2] School of Aeronautics and Astronautics, University of Electronic Science and Technology of China (UESTC), Chengdu, China;

[3] School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, China;

关键词: Parameter extraction;    multi-terminal circuit;    S-parameter;    electromagnetic interference;   

DOI  :  10.1109/ACCESS.2021.3052100

来源: DOAJ

【 摘 要 】

To better predict the high-frequency switching operation of the half-bridge circuit in power converters, the value of the parasitic elements of these devices must be accurately evaluated. A new MOSFET-based half-bridge circuit parasitic inductances extraction method using two-port S-parameters is proposed in this paper. By changing the terminal connection of the half-bridge circuit, we can treat it as several different two-port networks, and then detailed network analysis can be performed on it. The parasitic parameters of multi-terminal actual circuits such as half-bridge can be extracted accurately and quickly through the simple measurement steps and calculations of the proposed method.

【 授权许可】

Unknown